OVERVIEW OF OHMIC-CONTACT FORMATION ON N-TYPE GaAs BY LASER AND ELECTRON BEAM ANNEALING-Reference-Cited by-同舟云学术

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OVERVIEW OF OHMIC-CONTACT FORMATION ON N-TYPE GaAs BY LASER AND ELECTRON BEAM ANNEALING

Published:1980 Issue: Volume: Page:467-480
ISSN:
Container-title:Laser and Electron Beam Processing of Materials
language:
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Author:

Eckhardt Gisela

Publisher

Elsevier

Reference19 articles.

1. Models for contacts to planar devices

2. Contact Resistance and Contact Resistivity

3. Specific contact resistance of metal-semiconductor barriers

4. A review of the theory and technology for ohmic contacts to group III–V compound semiconductors

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Formation of Ohmic contacts to n-GaAs using ion beam mixing of Tellurium;Applied Physics A Solids and Surfaces;1992-06

2. GaAs Technology;GaAs Devices and Circuits;1987

3. Fabrication and Characterization of Metal-Semiconductor Schottky Barrier Junctions;Metal-Semiconductor Schottky Barrier Junctions and Their Applications;1984

4. Rapid Annealing of GaAs and Related Compounds;MRS Proceedings;1984

5. CW-CO2-Laser Alloying of Au-Ge-Ni Ohmic Contacts on GaAs;Ion Implantation: Equipment and Techniques;1983

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