ELECTRICAL CHARACTERISTICS OF LASER-ANNEALED POLYSILICON RESISTORS FOR DEVICE APPLICATIONS-Reference-Cited by-同舟云学术

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ELECTRICAL CHARACTERISTICS OF LASER-ANNEALED POLYSILICON RESISTORS FOR DEVICE APPLICATIONS

Published:1980 Issue: Volume: Page:626-631
ISSN:
Container-title:Laser and Electron Beam Processing of Materials
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Author:

Yaron Giora,Hess LaVerne D.,Olson Gregory L.

Publisher

Elsevier

Reference12 articles.

1. T. Ohzone, T. Hiruo, K. Isuji, S. Horiuchi, and S. Takayamaji, A 2kX8 Bit Static RAM, paper 14.7, IEDM, Washington, D. C., Dec. 4–6, 1978.

2. Two static 4K clocked and nonclocked RAM designs

3. V. G. McKenny, IEEE International Solid State Conference, Philadelphia, Feb. 16–18, 1977.

4. Electrical conduction in implanted polycrystalline silicon

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical Properties;Polycrystalline Silicon for Integrated Circuits and Displays;1998

2. Comparison of polysilicon films annealed with a CW or pulsed laser;Journal of Electronic Materials;1983-01

3. The influence of dielectric layers on the CW-Laser Annealing of polysilicon;Journal of Electronic Materials;1983-01

4. Applications of Laser Annealing in IC Fabrication;MRS Proceedings;1982

5. Laser Processing of Silicon for Advanced Microelectronic Devices and Circuits;MRS Proceedings;1980

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