Electrical Properties
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Publisher
Springer US
Link
http://link.springer.com/content/pdf/10.1007/978-1-4615-5577-3_5.pdf
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4. C A Dimitriadis and P A Coxon, “Hopping conduction in undoped low-pressure chemically vapor deposited polycrystalline silicon films in relation to the film deposition conditions,” J. Appl. Phys. 64, 1601–1604 (1 August 1988).
5. J D Cressler, W Hwang, and T-C Chen, “On the temperature dependence of majority carrier transport in heavily arsenic-doped polycrystalline silicon thin films,” J. Electrochem. Soc. 136, 794–804 (March 1989).
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