Contacts for Compound Semiconductors: Schottky Barrier Type-Reference-Cited by-同舟云学术

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Contacts for Compound Semiconductors: Schottky Barrier Type

Published:2016 Issue: Volume: Page:
ISSN:
Container-title:Reference Module in Materials Science and Materials Engineering
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Author:

Brillson L.J.

Publisher

Elsevier

Reference21 articles.

1. Transition in Schottky barrier formation with chemical reactivity;Brillson;Phys. Rev. Lett.,1978

2. The structure and properties of metal–semiconductor interfaces;Brillson;Surf. Sci. Rep.,1982

3. Surfaces and interfaces: atomic-scale structure, band bending and band offsets;Brillson,1992

4. Surfaces and Interfaces of Electronic Materials;Brillson,2010

5. ZnO Schottky barriers and ohmic contacts;Brillson;J. Appl. Phys.,2011

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Gamma irradiation effects on Al/n-Si Schottky junction properties;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2018-12

2. Implications of electron beam irradiation on Al/n-Si Schottky junction properties;Microelectronics Reliability;2018-12

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