Electron microscopic investigation of the nature of the dislocation loops created by electron irradiation (2 MeV) between room temperature and 200°C in InSb single crystals-Reference-Cited by-同舟云学术

Electron microscopic investigation of the nature of the dislocation loops created by electron irradiation (2 MeV) between room temperature and 200°C in InSb single crystals

Published:1983-10 Issue:10 Volume:17 Page:1223-1226
ISSN:0036-9748
Container-title:Scripta Metallurgica
language:en
Short-container-title:Scripta Metallurgica

Author:

Legros-de Mauduit B.,Lasserre A.,Reynaud F.

Publisher

Elsevier BV

Subject

General Engineering

Reference14 articles.

1. Messung der Energie zur Verlagerung eines Gitteratoms durch Elektronensto� in AIIIBV-Verbindungen *

2. Notizen: Messung der Energie zur Bildung eines Gitterdefektes in verschiedenen AIII Bv-Verbindungen durch Elektronenbestrahlung

3. Recovery of Electron Radiation Damage inn-Type InSb

4. Orientation Dependence of Electron Radiation Damage in InSb

5. Stage-II Recovery in Electron-Irradiated InSb

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electron-microscope study of a non-stoichiometric phase in InSb heated in a vacuum;Philosophical Magazine Letters;1987-12

2. High voltage electron irradiation (1 MV, 2 MV) of prestrained InSb single crystals;Scripta Metallurgica;1985-12

3. In situ HREM observation of solid-liquid interface;Philosophical Magazine A;1985-09

4. Studies of the dislocation loops produced in III–V semiconducting compounds of B3 structure by irradiation in a high voltage electron microscope;Radiation Effects;1985-01

5. Electron microscopic investigation of the nature of the dislocation loops created by electron irradiation (2MeV) between room temperature and 350°C in GaSb single crystals;Scripta Metallurgica;1984-09