Raman scattering in Ge1−ySny alloys
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference27 articles.
1. Ge–Sn semiconductors for band-gap and lattice engineering
2. Synthesis of ternary SiGeSn semiconductors on Si(100) via SnxGe1−x buffer layers
3. Transferability of optical bowing parameters between binary and ternary group-IV alloys
4. Scaling law for the compositional dependence of Raman frequencies in SnGe and GeSi alloys
5. Compositional dependence of Raman frequencies in ternaryGe1−x−ySixSnyalloys
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