Microstructure and magnetic behavior of Mn doped GeTe chalcogenide semiconductors based phase change materials-Reference-Cited by-同舟云学术

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Microstructure and magnetic behavior of Mn doped GeTe chalcogenide semiconductors based phase change materials

Published:2017-06 Issue: Volume:259 Page:19-23
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Adam Adam Abdalla Elbashir,Cheng Xiaomin,Abuelhassan Hassan H.,Miao Xiang Shui

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference25 articles.

1. Semiconductor Devices: Physics and Technology;Sze,2008

2. Physics of Semiconductor Devices;Sze,2006

3. Conduction and electrical switching in amorphous chalcogenide semiconductor films;Walsh;Phys. Rev.,1969

4. Making nonmagnetic semiconductors ferromagnetic;Ohno;Science,1998

5. Magnetic properties and phase change features in Fe-doped Ge–Sb–Te;Song;J. Nanosci. Nanotechnol.,2011

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