Influence of valence states and vacancy defects on the magnetic properties of Mn doped InN-Reference-Cited by-同舟云学术

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Influence of valence states and vacancy defects on the magnetic properties of Mn doped InN

Published:2019-08 Issue: Volume:297 Page:11-16
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Xu Daqing,Zhao Zihan,Zhang Yan,Lou Yongle,Li Peixian

Funder

Shaanxi Provincial Education Department

Xi'an University of Science and Technology

National Key Research and Development Program of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference39 articles.

1. Dilute ferromagnetic semiconductors: Physics and spintronic structures

2. Enhancing structural transition by carrier and quantum confinement: Stabilization of cubic InN quantum dots by Mn incorporation

3. Density functional study on the ferromagnetism of alkaline earth doped InN

4. First principles study on the spin unrestricted electronic structure properties of transition metal doped InN nanoribbons

5. First-principles study on the electronic and magnetic properties of InN nanosheets doped with 2p elements

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. DFT Insight to Ag2O Modified InN as SF6-N2 Mixture Decomposition Components Detector;Applied Sciences;2022-08-05

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