Local environment of nitrogen in GaNyAs1−y epilayers on GaAs (001) studied using X-ray absorption near edge spectroscopy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference22 articles.
1. Giant and Composition-Dependent Optical Bowing Coefficient in GaAsN Alloys
2. Excitons bound to nitrogen clusters in GaAsN
3. Excitons bound to nitrogen pairs in GaAs
4. Theory of electronic structure evolution in GaAsN and GaPN alloys
5. Band Anticrossing in GaInNAs Alloys
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1. Local structure analysis of Zn1-xMgxO thin films by soft X-ray absorption spectroscopy;physica status solidi (c);2013-10-24
2. InNxAs1-xband gap energy and band bowing coefficient calculation;The European Physical Journal Applied Physics;2007-12
3. Modification of the N bonding environment in GaN after high-dose Si implantation: An x-ray absorption study;Journal of Applied Physics;2007-04-15
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