Ferroelectric behavior and reproducible Bi-stable resistance switching property in K-doped ZnO thin films as candidate for application in non-volatile memories-Reference-Cited by-同舟云学术

Ferroelectric behavior and reproducible Bi-stable resistance switching property in K-doped ZnO thin films as candidate for application in non-volatile memories

Published:2015-05 Issue: Volume:209-210 Page:11-14
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Lee J.W.,Subramaniam N.G.,Kang T.W.,Shon Yoon,Kim E.K.

Funder

Leading Foreign Research Institute Recruitment Program

National Research Foundation of Korea (NRF)

Ministry of Education, Science and Technology (MEST)

Basic Science Research Program through the NFR

MEST

Quntum-functional Research Center (QSRC) of Dongguk University

Hindustan University through CENCON

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference15 articles.

1. Ferroelectric non-volatile memories for low-voltage, low-power applications

2. Epitaxial growth of lead zirconium titanate thin films on Ag buffered Si substrates using rf sputtering

3. Ferroelectricity in zinc cadmium telluride

4. Current-controlled resistance modulation in ferroelectric Cd1−xZnxS thin films for nonvolatile memory applications

5. Study of ferroelectric and reproducible bistable switching properties in CdMnS thin films for nonvolatile memory applications

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhanced ferroelectric properties in BiAlO₃ modified lead‐free Mn‐doped Bi_0.5(Na_0.8K_0.2)_0.5TiO₃ thin films;International Journal of Applied Ceramic Technology;2024-05-16

2. Resistive switching and Schottky barrier modulation at CoPt/ ferroelectric-like MgZnO interface for non-volatile memories;Journal of Materials Science: Materials in Electronics;2024-02-29

3. Effect of rapid thermal treatment on the electrical conductivity improvement of nc-ZnO:Bi thin film and ITO substrate;Ferroelectrics;2022-01-02

4. Large nonvolatile control of interfacial magnetic anisotropy in CoPt by a ferroelectric ZnO-based tunneling barrier;Physical Review B;2019-08-19

5. Nonlinear electrical properties and dielectric properties of ZnO ceramics doped with K2CO3;Journal of Materials Science: Materials in Electronics;2019-07