A low-field electron mobility analysis of cubic boron nitride-Reference-Cited by-同舟云学术

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A low-field electron mobility analysis of cubic boron nitride

Published:2022-09 Issue: Volume:352 Page:114776
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Chilleri John^ORCID,Wang Yana,Shur Michael S.^ORCID,O’Leary Stephen K.^ORCID

Funder

U.S. Army

China Scholarship Council

US Army Research Laboratory

Rensselaer Polytechnic Institute

Natural Sciences and Engineering Research Council of Canada

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference30 articles.

1. Ab initio calculations of carbon and boron nitride allotropes and their structural phase transitions using periodic coupled cluster theory

2. Presence and distribution of impurity defects in crystalline cubic boron nitride. A spectroscopic study

3. Ultrahigh thermal conductivity in isotope-enriched cubic boron nitride

4. Cubic boron nitride as a material for future electron device applications: A comparative analysis

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The transition between the collision-dominated and ballistic electron transport regimes as the device length is reduced: A continuum analysis;Journal of Applied Physics;2024-07-16

2. Phonon-assisted carrier transport and indirect optical absorption of cubic boron nitride from first-principles;Journal of Applied Physics;2024-02-01

3. The impact of device length on the electron’s effective mobility;Journal of Applied Physics;2023-09-28

4. Carrier Transport in Cubic Boron Nitride: First-Principles and Semiempirical Models;Physical Review Applied;2023-09-22

5. Threading dislocation lines and their impact on bulk cubic boron nitride’s low-field electron transport response;Solid State Communications;2022-11

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