Electronic band gaps of semiconductors as influenced by their isotopic composition-Reference-Cited by-同舟云学术

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Electronic band gaps of semiconductors as influenced by their isotopic composition

Published:2005-03 Issue:11 Volume:133 Page:709-714
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Ramdas A.K.,Rodriguez S.,Tsoi S.,Haller E.E.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference43 articles.

1. Optical properties of semiconductors. II. Infra-red transmission of germanium;Becker;Phys. Rev.,1949

2. Optical properties of semiconductors. III. Infra-red transmission of silicon;Becker;Phys. Rev.,1949

3. Infrared absorption of silicon;Fan;Phys. Rev. B,1950

4. Temperature dependence of the energy gap in monatomic semiconductors;Fan;Phys. Rev.,1950

5. Temperature dependence of the energy gap in semiconductors;Fan;Phys. Rev.,1951

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Intracenter dipole transitions of a hydrogen-like boron acceptor in diamond: Oscillator strengths and line broadening;Diamond and Related Materials;2021-12

2. Large substitutional impurity isotope shift in infrared spectra of boron-doped diamond;Physical Review B;2020-10-16

3. Energy Band Structure;Introduction to Isotopic Materials Science;2018

4. A comprehensive review of solar thermoelectric cooling systems;International Journal of Energy Research;2017-07-13

5. IR absorption and Raman spectra of single crystals of stable germanium isotopes;Optics and Spectroscopy;2016-02

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