Spin-dependent quantum well effect in fully epitaxial Cr/ultrathin Fe/MgO/Fe magnetic tunnel junctions
Author:
Funder
Osaka University
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference16 articles.
1. High Tunnel Magnetoresistance at Room Temperature in Fully Epitaxial Fe/MgO/Fe Tunnel Junctions due to Coherent Spin-Polarized Tunneling
2. Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers
3. Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions
4. Quantum size effect in magnetic tunnel junctions with ultrathin Fe(001) electrodes
5. Spin-Polarized Resonant Tunneling in Magnetic Tunnel Junctions
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1. Realizing Room‐Temperature Resonant Tunnel Magnetoresistance in Cr/Fe/MgAl 2 O 4 Quasi‐Quantum Well Structures;Advanced Science;2019-08-10
2. Dependence of Conductance on the Magnetic-layer Thickness in Magnetic Tunnel Junctions;Journal of the Korean Physical Society;2019-05
3. Quantum size effect in an Fe quantum well detected by resonant tunneling carriers injected from a p-type Ge semiconductor electrode;Applied Physics Letters;2018-04-09
4. Observation of spin-dependent quantum well resonant tunneling in textured CoFeB layers;Applied Physics Letters;2014-03-17
5. Detailed analysis of spin-dependent quantum interference effects in magnetic tunnel junctions with Fe quantum wells;Applied Physics Letters;2013-01-21
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