The origin of additional modes in Raman spectra of N+-implanted ZnO-Reference-Cited by-同舟云学术

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The origin of additional modes in Raman spectra of N+-implanted ZnO

Published:2006-06 Issue:10-11 Volume:138 Page:502-504
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Yu Jianguo,Xing Huaizhong,Zhao Qiang,Mao Huibing,Shen Ye,Wang Jiqing,Lai Zongsheng,Zhu Ziqiang

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference13 articles.

1. p-type ZnO films by monodoping of nitrogen and ZnO-based p–n homojunctions

2. Cluster-Doping Approach for Wide-Gap Semiconductors: The Case ofp-Type ZnO

3. Origin ofp-type doping difficulty in ZnO: The impurity perspective

4. Preparation and some properties of nitrogen-mixed ZnO thin films

5. Nitrogen-related local vibrational modes in ZnO:N

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