Room-temperature fabricated, fully transparent resistive memory based on ITO/CeO2/ITO structure for RRAM applications-Reference-Cited by-同舟云学术

Room-temperature fabricated, fully transparent resistive memory based on ITO/CeO2/ITO structure for RRAM applications

Published:2015-01 Issue: Volume:202 Page:28-34
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Ismail Muhammad,Rana Anwar Manzoor,Talib Ijaz,Tsai Tsung-Ling,Chand Umesh,Ahmed Ejaz,Nadeem Muhammad Younus,Aziz Abdul,Shah Nazar Abbas,Hussain Muhammad

Funder

Higher Education Commission, Pakistan

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference38 articles.

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3. Growth, dielectric properties, and memory device applications of ZrO2 thin films

4. Current conduction and resistive switching characteristics of Sm2O3 and Lu2O3 thin films for low-power flexible memory applications

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