Radiation defects in STI silicon diodes and their effects on device performance-Reference-Cited by-同舟云学术

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Radiation defects in STI silicon diodes and their effects on device performance

Published:2001-12 Issue: Volume:308-310 Page:1217-1221
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Hayama K,Ohyama H,Simoen E,Claeys C,Poyai A,Miura T,Kobayashi K

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference6 articles.

1. A scaleable, radiation hardened shallow trench isolation

2. Total dose effects on the shallow-trench isolation leakage current characteristics in a 0.35 /spl mu/m SiGe BiCMOS technology

3. Evaluation of interface states in MOS structures by DLTS with a bipolar rectangular weighting function

4. Assessment of Radiation Induced Lattice Defects in Shallow Trench Isolation Diodes Irradiated by Neutron

5. H. Ohyama, et al., Proceedings of E-MRS 2001 Spring Meeting, Strasbourg, France, June 2001, B/P2.14.

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photodetector performance enhancement using an electron accelerator controlled by light;Applied Optics;2012-07-13

2. An experimental investigation of P–N diode electrical characteristics by soft X-ray annealing method;Optics & Laser Technology;2012-04

3. Effect of X-Ray Irradiation on the Current of P-N Diode;Materials Science Forum;2011-07

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