Electron paramagnetic resonance studies of a carbon vacancy-related defect in as-grown 4H–SiC-Reference-Cited by-同舟云学术

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Electron paramagnetic resonance studies of a carbon vacancy-related defect in as-grown 4H–SiC

Published:2001-12 Issue: Volume:308-310 Page:671-674
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Konovalov V.V,Zvanut M.E,Tsvetkov V.F,Jenny J.R,Müller St.G,Hobgood H.McD

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. The Microscopic and Electronic Structure of Shallow Donors in SiC

2. Acceptor Impurities in Silicion Carbide: Electron Paramagnetic Resonance and Optically Detected Magnetic Resonance Studies

3. Deep level centers in silicon carbide: A review

4. Infrared spectra and electron spin resonance of vanadium deep level impurities in silicon carbide

5. Deep level transient spectroscopic and Hall effect investigation of the position of the vanadium acceptor level in 4H and 6H SiC

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High Purity Semi-Insulating 4H-SiC Epitaxial Layers by Defect-Competition Epitaxy: Controlling Si Vacancies;Applied Physics Express;2012-02-07

2. Compensation mechanism in high purity semi-insulating 4H-SiC;Journal of Applied Physics;2007-03

3. Electron paramagnetic resonance of electronic-grade SiC substrates;Journal of Physics: Condensed Matter;2004-11-06

4. Ab initiostudy of the annealing of vacancies and interstitials in cubic SiC: Vacancy-interstitial recombination and aggregation of carbon interstitials;Physical Review B;2004-06-11

5. Defect Migration and Annealing Mechanisms;Silicon Carbide;2004

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