Band-gap bowing in SixGe1−x alloy
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference28 articles.
1. GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy
2. Effect of buffer-layer composition on new optical transitions in Si/Ge short-period superlattices
3. Structurally induced optical transitions in Ge-Si superlattices
4. Effect of Alloying and Pressure on the Band Structure of Germanium and Silicon
5. The electronic theory of SiGe solid solutions
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