Intra- and inter-band transitions in HgSe in megagauss fields-Reference-Cited by-同舟云学术

Intra- and inter-band transitions in HgSe in megagauss fields

Published:2001-01 Issue: Volume:294-295 Page:459-462
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Stolpe I.,Portugall O.,Puhlmann N.,Mueller H.-U.,von Ortenberg M.,von Truchsess M.,Becker C.R.,Pfeuffer-Jeschke A.,Landwehr G.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. HgSe: Metal or Semiconductor?

2. Comment on “HgSe: Metal or Semiconductor?”

3. M. von Truchsess, A. Pfeuffer-Jeschke, S. Einfeldt, C.R. Becker, E. Batke, in: D. Gershoni (Ed.), Proceedings of the ICPS24, Jerusalem 1998, World Scientific, Singapore, 1999.

4. Temperature study of interband Γ6→Γ8 magnetoabsorption in HgSe

5. Ph.D. Thesis;von Truchsess,1999

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