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Impurity effects in silicon implanted with rare-earth ions

Published:1999-12 Issue: Volume:273-274 Page:346-349
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Emtsev V.V,Emtsev V.V,Poloskin D.S,Shek E.I,Sobolev N.A,Michel J,Kimerling L.C

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. The electrical and defect properties of erbium‐implanted silicon

2. The effects of oxygen and defects on the deep‐level properties of Er in crystalline Si

3. Optically active erbium centers in silicon

4. A comparative study of donor formation in dysprosium, holmium, and erbium implanted silicon

5. Impurity enhancement of the 1.54‐μm Er3+luminescence in silicon

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dependence of the concentration of ionized donors on epitaxy temperature for Si:Er/Si layers grown by sublimation molecular-beam epitaxy;Semiconductors;2011-01

2. Point and extended defects engineering as a key to advancing the technology of light-emitting diodes based on single-crystal Si and SiGe layers;Physica B: Condensed Matter;2007-12

3. Luminescent Erbium-Doped Porous Silicon Bilayer Structures;Advanced Materials;2001-09

4. Effects of oxygen coimplantation on the formation of donor centers in erbium-implanted silicon;Materials Science and Engineering: B;2001-04

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