Crystallization of amorphous thin LPCVD Si films: “in situ” TEM measurement of nucleation and grain growth rates-Reference-Cited by-同舟云学术

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Crystallization of amorphous thin LPCVD Si films: “in situ” TEM measurement of nucleation and grain growth rates

Published:1993-12 Issue:1-2 Volume:173 Page:377-380
ISSN:0921-5093
Container-title:Materials Science and Engineering: A
language:en
Short-container-title:Materials Science and Engineering: A

Author:

Guillemet J.P,de Mauduit B,Pieraggi B,Bielle-Daspet D,Scheid E

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference16 articles.

1. Solid phase epitaxial recrystallization of thin polysilicon films amorphized by silicon ion implantation

2. Growth and Physical Properties of LPCVD Polycrystalline Silicon Films

3. Transient solid-phase crystallization study of chemically vapor-deposited amorphous silicon films byin situx-ray diffraction

4. Axially Controlled Solid-Phase Crystallization of Amorphous Silicon

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1. On the transient amorphous silicon structures during solid phase crystallization;Journal of Non-Crystalline Solids;2013-03

2. Laser nucleation and solid phase crystallization of a-Si:H;SPIE Proceedings;2012-10-15

3. Kinetic study of solid phase crystallisation of expanding thermal plasma deposited a-Si:H;Thin Solid Films;2012-06

4. Influences of deposition and crystallization kinetics on the properties of silicon films deposited by low-pressure chemical vapour deposition from silane and disilane;Thin Solid Films;2010-09

5. Shape of grain size distributions during crystal grain nucleation in a-Si;Thin Solid Films;1999-01

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