Author:
Mun Jae Kyoung,Lim Jong Won,Lee Jae Jin,Yang Jeon Wook
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference19 articles.
1. Degradation mechanism of GaAs MESFETs;Mun;Microelectron. Reliab,1998
2. Magistrali F, Sala D, Turner J, Valli P, Vanzi M. Experimental evidence of Ti/Pt/Au-GaAs interaction obtained by means of TEM technique, IEEE GaAs IC Symp., 1991:199-202
3. Gate metallization ‘sinking’ into the active channel in Ti/W/Au metallized power MESFETs;Canali;IEEE El. Dev. Lett,1986
4. Characterization of reactively sputtered WNx film as a gate metal for self-alignment GaAs metal-semiconductor field effect transistors;Uchitomi;J. Vac. Sci. Tech,1986
5. Tunsten silicide Schottky contacts on GaAs;Zhongde;J. Vac. Sci. Tech,1986