Reliability of compound semiconductor devices for space applications

Author:

Kayali Sammy

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Kayali S, Ponchak G, Shaw R. GaAs MMIC reliability assurance guideline for space applications, JPL Publication 96–25

2. The development of a GaAs MMIC reliability and space qualification guide;Ponchak,1994

3. Gate metallization sinking into the active channel in Ti/W/Au metallized power MESFETs;Canali;IEEE E. Dev. Lett.,1986

4. Thermal stability and degradation mechanisms of Ti-Pt-Au, Ti-W-Au and Wsi2-Ti-Pt-Au Schottky contacts on GaAs;Wurfl,1989

5. Irvin JC. Reliability of GaAs FETs. In: DiLorenzo J, Khandelwal D, editors. GaAs FET Principles and Technology, ch. Chap. 6. Mass.: Artech House, 1985. p. 348–400

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