Modeling of ionizing irradiation influence on Schottky-gate field-effect transistor-Reference-Cited by-同舟云学术

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Modeling of ionizing irradiation influence on Schottky-gate field-effect transistor

Published:1999-08 Issue:8 Volume:39 Page:1247-1263
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Demarina N.V,Obolensky S.V

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference98 articles.

1. Effect of penetrating radiation on electronic devices;Kulakov,1980

2. Radiation effects in IC;Agahanian,1989

3. Surface radiation effects in elements of IC;Pershenkov,1988

4. Configurating of CAD software for space born electronic equipment with account of radiation effects;Verhoturov;Electronnaja Tehnika,1992

5. GaAs devices and circuits;Shur,1987

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of High Energy Proton Irradiation on DC Performance of GaAs Metal-Semiconductor Field Effect Transistors;Journal of The Electrochemical Society;2002

2. Electron Transport in GaAs Nanostructures under Irradiation;Technical Physics;2002-01

3. Study of radiation induced resistance mechanisms in GaAs MESFET and TLM structures;Solid-State Electronics;2001-07

4. Effect of the ion-beam-induced getters on the parameters of neutron-irradiated GaAs heterostructures;Technical Physics Letters;2000-08

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