Characterization and optimization of a bipolar ESD-device by measurements and simulations-Reference-Cited by-同舟云学术

Characterization and optimization of a bipolar ESD-device by measurements and simulations

Published:1999-11 Issue:11 Volume:39 Page:1563-1577
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Stricker Andreas D.,Mettler Stephan,Wolf Heinrich,Mergens Markus,Wilkening Wolfgang,Gieser Horst,Fichtner Wolfgang

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference36 articles.

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4. Layout optimization of an ESD-protection n-MOSFET by simulation and measurement;Stricker,1995

5. Diaz C, Duvvury C, Kang S. Source contact placement for efficient ESD/EOS protection in grounded substrate MOS ICs. US Patent filed, Patent Activity TI-17832, 1993

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