Substrate potential shift due to parasitic minority carrier injection in smart-power ICs: measurements and full-chip 3D device simulation-Reference-Cited by-同舟云学术

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Substrate potential shift due to parasitic minority carrier injection in smart-power ICs: measurements and full-chip 3D device simulation

Published:2001-06 Issue:6 Volume:41 Page:815-822
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Schenkel M,Pfäffli P,Wilkening W,Aemmer D,Fichtner W

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Murari B, Bertotti F, Vignola GA. Smart power ICs: technologies and applications. Berlin: Springer; 1996

2. Power integrated circuits – a brief overview;Baliga;IEEE Trans Electron Dev,1986

3. Masui S. Simulation of substrate coupling on mixed-signal MOS circuits. 1992 Symposium on VLSI Circuits. Digest of Technical Papers, IEEE, New York, 1992. p. 42–3

4. Experimental results and modeling techniques for substrate noise in mixed-signal integrated circuits;Su;IEEE J Solid-State Circ,1993

5. A simple approach to modeling cross-talk in integrated circuits;Joardar;IEEE J Solid-State Circ,1994

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