Charged device model metrology: limitations and problems-Reference-Cited by-同舟云学术

Charged device model metrology: limitations and problems

Published:2002-06 Issue:6 Volume:42 Page:919-927
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Henry Leo G.,Barth Jon,Hyatt Hugh,Diep Tom,Stevens Michael

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference17 articles.

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3. Renninger RG, Jon MC, Lin DL, Lin L, Diep T, Welsher TL. A field-induced charged device model simulator. EOS/ESD Symposium Proceedings, New Orleans, EOS-11, 1989. p. 59–71

4. Hall K. Tests with different IEC801.2 ESD simulators have different results. EOS/ESD Symposium Proceedings, Las Vegas, EOS-16, 1994. p. 161–163

5. Pommerenke D. Transient Fields of ESD. EOS/ESD Symposium Proceedings, Las Vegas, EOS-16, 1994. p. 150–159

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