Failures of ICs Caused by Dielectric Breakdown-Reference-Cited by-同舟云学术

Failures of ICs Caused by Dielectric Breakdown

Published:2023-04-02 Issue:2 Volume:17 Page:69-83
ISSN:1998-6920
Container-title:The Herald of the Siberian State University of Telecommunications and Information Science
language:
Short-container-title:jour

Author:

Shubin V. V.¹^ORCID

Affiliation:

1. Siberian State University of Telecommunications and Information Science (SibSUTIS)

Abstract

The paper describes some problems of operation failures of integrated circuits (ICs) and corresponding preventative measures by constructive-technological, schematic-topological methods at the early stages of design process. The issues related to the problems of IC failures caused by dielectric breakdown are considered, generalized and systematized. Some examples that can be used in practice when developing ICs to improve their reliability, taking into account current trends in the microelectronics field.

Publisher

Siberian State University of Telecommunications and Informatics

Reference15 articles.

1. DiStefano T. H., Shatzkes M. Impact ionization model for dielectric instability and breakdown // Appl. Phys. Lett. 1974. V. 25. P. 685–687.

2. Solomon P. Breakdown in silicon oxide – a review // J. Vac. Sci. Technol. 1977. V. 14. P. 1122–1130.

3. Klein N. Electrical breakdown mechanisms in thin insulators // Thin Solid Films. 1978. V. 50. P. 223–232.

4. Yeo Y. C., King T. J., Hu C. MOSFET Gate Leakage Modeling and Selection Guide for Alternative Gate Dielectrics Based on Leakage Considerations // IEEE Transactions on Electron Devices. 2003. V. 50, № 4. P. 1027–1035.

5. Hastings A. The Art of Analog Layout. New Jersey: Pearson Prentice Hall, 2006. 648 p. 6. Fowler R. H., Nordheim L. Electron emission in intense electric fields // Proc. R. Soc. London, Ser. A. 1928. V. 119. P. 173–181.