A complementary molecular-model (including field and current) for TDDB in SiO 2 dielectrics-Reference-Cited by-同舟云学术

A complementary molecular-model (including field and current) for TDDB in SiO 2 dielectrics

Published:2000-08 Issue:8-10 Volume:40 Page:1591-1597
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

McPherson J.W.,Khamankar R.B.,Shanware A.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference18 articles.

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4. International Reliability Physics Proceedings;McPherson,1985

5. International Reliability Physics Proceedings;Chen,1985

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