Author:
Morillon B,Dilhac J.-M,Ganibal C,Anceau C
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference7 articles.
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2. Morillon B, Dilhac J-M, Ganibal C, Anceau C. Realization of deep P+ zones by Al thermomigration in a temperature gradient RTP furnace, 199th ECS Meeting, Washington DC, USA, March 2001, ECS Proc. vol. 2001–9. p. 393–400
3. Pierre F, Aachboun S, Bonnaud O, Lhermitte H, Ranson P, Anceau C, et al. Deep discrete trenches filled by in situ doped polysilicon: an alternative method for junction insulating box. In: Proceedings of the SPIE, vol. 3881, 1999. p. 252
4. Causse O, Austin P, Sanchez J-L. A new peripheral planar structure allowing a symmetrical blocking voltage, CAS’99, 1999. p. 465
5. Dilhac J-M, Ganibal C. Temperature gradient rapid thermal processor, 197th ECS Meeting, Toronto, Canada, May 2000, ECS Proc. vol. 2000–9. p. 421–8
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