Effect of silicon anisotropy on the stability of thermomigration of linear zones

Author:

Seredin Boris M.,Popov Victor P.,Malibashev Alexander V.,Gavrus Igor V.,Loganchuk Sergey M.,Martyushov Sergey Y.

Funder

Ministry of Science and Higher Education of the Russian Federation

Publisher

Springer Science and Business Media LLC

Reference19 articles.

1. Pfann WG (1963) Zone Melting, 2nd edn. Wiley and Sons, New York

2. Lozovskii VN, Lunin LS, Popov VP (1987) Zone recrystallization by temperature gradient. Metallurgy, Moscow

3. Lozovskii VN, Popov VP, Seredin BM (2015) Comparing diffusion and epitaxial methods for obtaining radiation-resistance structures of power semiconductor devices Questions of atomic science and technics. Series: Physics of radiation effects on radio-electronic equipment 3:57–61

4. Anthony TR, Boah JK, Chang MF, Cline HE (1976) Thermomigration processing of isolation grids in power structures. IEEE Trans Electron Devices 23(8):818–823. https://doi.org/10.1109/T-ED.1976.18492

5. Chang M, Kennedy R (1981) The application of temperature gradient zone melting to silicon wafer processing. J Electrochem Soc 10(1149/1):2127216

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