Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. High-efficiency GaAs-based PHEMT C-band power amplifier;Brown;IEEE Microwave Guided Wave Lett.,1996
2. 5 mm high-power-density dual-delta-doped power HEMT’s for 3 V L-band applications;Lai;IEEE Electron Device Lett.,1996
3. Pavlidis D, HBT vs. PHEMT vs. MESFET: What’s the best and why. In: 1999 International Conference on GaAs Manufacturing Technology, Vancouver, Canada, April 1999. p. 157–60
4. The effects of buffer thickness on GaAs MESFET characteristics: channel–substrate current, drain breakdown, and reliability;Gao;Microelectron. Reliab.,2002
5. A new method for determining the FET small-signal equivalent circuit;Dambrine;IEEE Trans. Microwave Theory Tech.,1988
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献