On-wafer heating tests to study stability of silicon devices-Reference-Cited by-同舟云学术

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On-wafer heating tests to study stability of silicon devices

Published:1998-06 Issue:6-8 Volume:38 Page:1069-1073
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Manic D.,Haddab Y.,Popovic R.S.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Stress-Related Problems in Silicon Technology;Hu;Journal of Applied Physics,1991

2. Effect of Mechanical Stress on the Offset Voltages of Hall Devices in Si IC;Kanda;Phys. stat. sol.,1976

3. Piezo-Hall coefficients of n-type silicon;Halg;J. Appl. Phys.,1988

4. Effects of surface films and film edges on dislocation movement in silicon;Hu;Journal of Applied Physics,1975

5. The Influence of Stress on the Surface-Near Defect Structure;Reiche,1992

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