On the determination of the time-dependent degradation laws and device lifetime in deep submicron n- and p- channel SOI MOSFETs
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. Takeda E, Suzuki N. An empirical model for device degradation due to hot-carrier injection. IEEE Electron Dev Lett 1983;EDL-4:111–3.
2. An analytical model for self-limiting behavior of hot-carrier degradation in 0.25-μm n-MOSFETs;Liang;IEEE Electron Dev Lett,1992
3. Two-stage hot-carrier degradation and its impact on submicrometer LDD NMOSFET Lifetime Prediction;Chan;IEEE Trans Electron Dev,1995
4. Features and mechanisms of the saturating hot-carrier degradation in LDD NMOSFETs;Raychaudhuri;IEEE Trans Electron Dev,1996
5. Physical analysis for saturation behavior of hot-carrier degradation in lightly doped drain n-Channel metal-oxide-semiconductor field effect transistors;Goo;Jpn J Appl Phys,1994
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