Author:
Cattani L.,Borgarino M.,Fantinia F.
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference8 articles.
1. The effects of Base Dopant Diffusion on DC and RF Characteristics of InGaAs/InAlAs Heterojunction Bipolar Transistors;Hafizi;IEEE Electron Device Letters,1992
2. Characterization of Current-Induced Degradation in Be-doped HBTs Based in GaAs and InP;Tanaka;IEEE Trans. on Electron Devices,1993
3. Recombination-enhanced impurity diffusion in Be-doped GaAs;Uematsu;Applied Physics Letters,1991
4. Kirtania A.K., Das M.B., Chandrasekhar S., Lunardi L.M., Qua G.J., Hamm R.A., Yang L., Measurement and Comparison of 1/f Noise and g-r Noise in Silicon Homojunction and III–V Heterojunction Bipolar Transistors, IEEE Trans. on Electron Devices, vol. 43, n. 5, pp. 784–792
5. Experimental Evaluation of the Minimum Detectable Outdiffusion Lenght for AlGaAs/GaAs HBTs;Borgarino;Solid-State Electronics,1998