Kinetics and thermodynamics of silicon carbide physical vapor transport reactions: A quantum chemistry and kinetic Monte Carlo approach-Reference-Cited by-同舟云学术

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Kinetics and thermodynamics of silicon carbide physical vapor transport reactions: A quantum chemistry and kinetic Monte Carlo approach

Published:2022-02 Issue: Volume:554 Page:111421
ISSN:0301-0104
Container-title:Chemical Physics
language:en
Short-container-title:Chemical Physics

Author:

Abubakar Alao Ahmed,Hsu Wen-Dung

Funder

Kementerian Pendidikan Malaysia

Ministry of Science and Technology, Taiwan

Publisher

Elsevier BV

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Reference69 articles.

1. T. Uesugi, Power devices for automotive applications-Reviews of technologies for low power dissipation and high ruggedness, R&D Review of Toyota CRDL, 35(2) (2000).

2. Technical trend of power electronics systems for automotive applications;Masayoshi;Japanese J. Appl. Phys.,2020

3. Silicon Carbide: Recent Major Advances;Choyke,2013

4. Power semiconductor device figure of merit for high-frequency applications;Baliga;IEEE Electron Device Lett.,1989

5. Anthony O’Neill, “Silicon carbide power devices: Hopeful or hopeless?;Johnson,1999

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1. Sticking coefficient and Si/C ratio of silicon carbide growth species on reconstructed 4H−SiC(0001‾) surface by ab-initio calculations;Vacuum;2022-11

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