The effect of process parameters on dc self-bias voltage in reactive ion etching of GaAs using CH4/H2
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference8 articles.
1. Selective dry etching of GaAs over AlGaAs in SF6/SiCl4 mixtures;Salimian;J. Vac. Sci. Technol. B,1988
2. A novel process for reactive ion etching in InP using CH4/H2, GaAs and related compounds;Niggebrügge,1985
3. Reactive ion etching of GaAs using a mixture of methane and hydrogen;Cheung;Electron. Lett.,1978
4. Passivation of donors in electron beam lithographically defined nanostructures after methane/hydrogen reactive ion etching;Cheung;J. Vac. Sci. Technol. B,1988
5. Reactive ion etching of III–V semiconductors using carbon-containing gases;Franz;J. Electrochem. Soc.,1990
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