Physical modelling of the enhanced diffusion of boron due to ion implantation in thin-base npn bipolar transistors-Reference-Cited by-同舟云学术

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Physical modelling of the enhanced diffusion of boron due to ion implantation in thin-base npn bipolar transistors

Published:1995-03 Issue:2-3 Volume:26 Page:255-259
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Mouis M.,Gregory H.J.,Denorme S.,Mathiot D.,Ashburn P.,Robbins D.J.,Glasper J.L.

Publisher

Elsevier BV

Subject

General Engineering

Reference9 articles.

1. Ion beam enhanced diffusion of boron during Si molecular beam epitaxy;Pukite;Appl. Phys. Lett.,1989

2. Integration of SiMBE and device processing;Gravesteijn,1991

3. Heterojunction bipolar transistor with Si1 − xGex base;Pruijboom;Microelectron. Eng.,1992

4. Damage enhanced diffusion;Michel,1991

5. Titan, a two-dimensional process/device simulator;Gerodolle,1989

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Phase noise modeling in LC oscillators implemented in SiGe technology;Journal of Semiconductors;2013-02

2. Determination of bandgap narrowing and parasitic energy barriers in SiGe HBT's integrated in a bipolar technology;IEEE Transactions on Electron Devices;1997-05

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