Very thin oxides in vlsi technology: Properties and device implications-Reference-Cited by-同舟云学术

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Very thin oxides in vlsi technology: Properties and device implications

Published:1990-01 Issue:2 Volume:21 Page:21-40
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Majkusiak B.,Jakubowski A.

Publisher

Elsevier BV

Subject

General Engineering

Reference61 articles.

1. Ultra-large scale integration;Meindl;IEEE Trans. Electron Devices,1984

2. Trends in semiconductor memories;Maes;Microelectron J.,1989

3. Advanced cell structures for dynamic RAMs;Lu;IEEE Circ. Dev. Mag.,1989

4. Trends in lithography;Halle;IEEE Circ. Dev. Mag.,1988

5. MOS VLSI reliability and yield trends;Woods,1986

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. THERMAL OXIDATION OF SILICON AND Si-SiO2 INTERFACE MORPHOLOGY, STRUCTURE AND LOCALIZED STATES;Handbook of Surfaces and Interfaces of Materials;2001

2. Influence of interfaces on electrical characteristics formation in monocrystalline silicon–noncrystalline ultrathin oxide – polycrystalline silicon structures;Microelectronics Reliability;2000-04

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