1. Dielectric breakdown in MOS devices, Part I: Defect-related and intrinsic breakdown;Wolters;Philips J. Res.,1985
2. Comparison of interpolysilicon oxide lifetime using ramped and constant voltage measurements;Martin,1994
3. Breakdown fields in thin oxide layers;Verweij,1986
4. Dielectric breakdown in MOS devices, Part II: Conditions for the intrinsic breakdown;Wolters;Philips J. Res.,1985
5. D.R. Wolters, J.F. Verweij and A.T.A. Zegers-van Duynhoven, Dielectric breakdown in SiO2, a survey of test methods, in G. Barbottin and A. Vapaille (eds.), Instabilities in SiO2 North-Holland, Amsterdam, in preparation.