Investigation of gate oxide breakdown in CMOS integrated circuits-Reference-Cited by-同舟云学术

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Investigation of gate oxide breakdown in CMOS integrated circuits

Published:1989-11 Issue:6 Volume:20 Page:19-26
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Peŝić B.,Dimitrijev S.,Stojadinović N.

Publisher

Elsevier BV

Subject

General Engineering

Reference22 articles.

1. Failure physics of integrated circuits — a review;Stojadinović;Microelectron. Reliab.,1983

2. Failure mechanisms of integrated circuits;Stojadinović,1985

3. New concerns about integrated circuit reliability;Peck,1978

4. Updating of CMOS reliability;Brambila;Microelectron. Reliab.,1983

5. Testing for MOS IC failure modes;Edwards;IEEE Trans. Reliab.,1982

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dielectric Reliability Measurement Methods: A Review;Microelectronics Reliability;1998-02

2. Dielectric integrity of thin thermal oxides on silicon;Microelectronics Reliability;1993-09

3. Ultra-thin dielectrics for semiconductor applications— growth and characteristics;Microelectronics Journal;1991-04

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