1. Efficient two-dimensional Monte Carlo simulation of ion implantation;Hobler,1987
2. A new model of anomalous phosphorus diffusion in silicon;Budil,1988
3. Two-dimensional modeling of ion implantation with spatial moments;Hobler;Solid State Electron,1987
4. A simple model for the transient, enhanced diffusion of ion-implanted phosphorus in silicon;Morehead,1985
5. Simulation of critical IC-fabrication processes using advanced physical and numerical methods;Jüngling;IEEE Trans. on Electron. Devices, Joint Spec. Issue on VLSI,1985