Device modelling for the 1990s-Reference-Cited by-同舟云学术

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Device modelling for the 1990s

Published:1995-03 Issue:2-3 Volume:26 Page:217-233
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Kosina H.,Langer E.,Selberherr S.

Publisher

Elsevier BV

Subject

General Engineering

Reference63 articles.

1. Silicon-silicon dioxide field induced surface devices;Kahng,1960

2. MINIMOS 3: A MOSFET simulator that includes energy balance;Hänsch;IEEE Trans. Electron Dev.,1987

3. PISCES IBB;Pinto,1985

4. Realistic device simulation in three dimensions;Ciampolini,1989

5. Three-dimensional numerical semiconductor device simulation: algorithms, architectures, results;Heiser;IEEE Trans. Computer-Aided Design,1991

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effective potentials;The Wigner Function in Science and Technology;2018

2. Modeling drive currents and leakage currents: a dynamic approach;Journal of Computational Electronics;2009-09-29

3. Almost Newton method for large flux steady-state of 1D Poisson–Nernst–Planck equations;Journal of Computational and Applied Mathematics;2005-11

4. Full-band Monte Carlo model with screened pseudopotential based phonon scattering rates for a lattice with basis;Journal of Applied Physics;2002-11

5. Numerical modeling of steady-state ion transfer in electrochemical systems with allowance for migration;Russian Journal of Electrochemistry;2002

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