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Resonant tunnelling double barrier heterostructures

Published:1993-12 Issue:8 Volume:24 Page:763-778
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Lippens D.

Publisher

Elsevier BV

Subject

General Engineering

Reference32 articles.

1. Tunneling in a finite superlattice;Tsu;Applied Physics Letters,1973

2. Resonant tunneling in semiconductor double barriers;Chang;Applied Physics Letters,1974

3. DC and AC analysis of high current double barrier structures;Vanbesien;Solid State Electronics,1989

4. Time domain analysis of resonant tunneling in double barrier heterostructure;de Saint Pol,1990

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Controlling Phase‐Coherent Electron Transport in III‐Nitrides: Toward Room Temperature Negative Differential Resistance in AlGaN/GaN Double Barrier Structures;Advanced Functional Materials;2020-12-03

2. Heterostructure and Compound Semiconductor Devices;Low Temperature Electronics;2001

3. Scattering parameter measurements of resonant tunneling diodes up to 40 GHz;IEEE Transactions on Electron Devices;1995-07

4. Capacitance and hysteresis study of AlAs/GaAs resonant tunneling diode with asymmetric spacer layers;Journal of Applied Physics;1995-04-15

5. Electroluminescence in p-i-n double-barrier resonant tunnelling structures;Microelectronics Journal;1994-11

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