Controlling Phase‐Coherent Electron Transport in III‐Nitrides: Toward Room Temperature Negative Differential Resistance in AlGaN/GaN Double Barrier Structures-Reference-Cited by-同舟云学术

Controlling Phase‐Coherent Electron Transport in III‐Nitrides: Toward Room Temperature Negative Differential Resistance in AlGaN/GaN Double Barrier Structures

Published:2020-12-03 Issue:8 Volume:31 Page:2007216
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Wang Ding¹,Chen Zhaoying¹,Su Juan²,Wang Tao¹,Zhang Baoqing¹,Rong Xin¹,Wang Ping¹,Tan Wei²,Guo Shiping³,Zhang Jian⁴,Shen Bo¹,Wang Xinqiang¹^ORCID

Affiliation:

1. State Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of Physics Nano‐Optoelectronics Frontier Center of Ministry of Education (NFC‐MOE) Peking University Beijing 100871 P. R. China

2. Microsystem and Terahertz Research Center China Academy of Engineering Physics Chengdu 610200 P. R. China

3. Advanced Micro‐Fabrication Equipment Inc. Shanghai 201201 P. R. China

4. School of Electronic Science and Engineering University of Electronic Science and Technology of China Chengdu 610054 P. R. China

Funder

Science Challenge Project

National Natural Science Foundation of China

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.202007216

Reference44 articles.

1. Phonon-Assisted Resonant Tunneling of Electrons in Graphene–Boron Nitride Transistors

2. Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures

3. Resonant Tunneling and Negative Differential Resistance in Black Phosphorus Vertical Heterostructures

4. Armchair Graphene Nanoribbon Resonant Tunneling Diodes Using Antidote and BN Doping

5. Resonant tunnelling and negative differential conductance in graphene transistors

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-performance negative differential resistance characteristics in homoepitaxial AlN/GaN double-barrier resonant tunneling diodes;Japanese Journal of Applied Physics;2024-08-01

2. Size- and Voltage-Dependent Electron Transport of C2N-Rings-Based Molecular Chains;Molecules;2023-12-07

3. M-plane AlGaN digital alloy for microwire UV-B LEDs;Applied Physics Letters;2023-04-03

4. Enhancement of nonvolatile memory characteristics caused by GaN/AlN resonant tunneling diodes;Semiconductor Science and Technology;2023-03-14

5. Dawn of nitride ferroelectric semiconductors: from materials to devices;Semiconductor Science and Technology;2023-03-06