Study of defects in thermal SiO2 grown in the presence of 1,1,1-trichloroethane by Wright etchant
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Published:1991-05
Issue:3
Volume:22
Page:17-29
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ISSN:0026-2692
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Container-title:Microelectronics Journal
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language:en
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Short-container-title:Microelectronics Journal
Subject
General Engineering