Transient analysis of charge transport in the nitride of MNOS devices under Fowler-Nordheim injection conditions-Reference-Cited by-同舟云学术

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Transient analysis of charge transport in the nitride of MNOS devices under Fowler-Nordheim injection conditions

Published:1991-11 Issue:7-8 Volume:22 Page:5-17
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Martin F.,Aymerich X.

Publisher

Elsevier BV

Subject

General Engineering

Reference25 articles.

1. Instabilities in Silicon Devices;Gentil,1989

2. Change transport and storage in metal-nitride-oxide-semiconductor (MNOS) structures;Frohman-Bentchkowsky;J. Appl. Phys.,1969

3. Theory of the switching behavior of MIS memory transistors;Ross;RCA Rev.,1969

4. Tunnel mechanisms in MNOS structures;Dorda;Phys. Status Solidi,1970

5. Theory of MNOS memory device behavior;Ferris-Prabhu;IBM J. Res. Dev.,1973

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1. TCAD simulation for capture / emission of carriers by traps in SiN: trap-assisted tunneling model extended for capture of carriers injected via Fowler-Nordheim tunneling;Japanese Journal of Applied Physics;2021-12-14

2. Hot electron engineering for boosting electroluminescence efficiencies of silicon-rich nitride light emitting devices;Journal of Luminescence;2017-03

3. Charge trapping properties at silicon nitride/silicon oxide interface studied by variable-temperature electrostatic force microscopy;Journal of Applied Physics;2006-07-15

4. Relumped single-event microkinetic model for alkane hydrocracking on shape-selective catalysts: catalysis on ZSM-22 pore mouths, bridge acid sites and micropores;Chemical Engineering Science;2004-11

5. Transient conduction in multidielectric silicon–oxide–nitride–oxide semiconductor structures;Journal of Applied Physics;2001-03

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