Strain relaxation of AlxGa1−xN epitaxial layers on GaN and SiC substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference16 articles.
1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
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3. Misfit stress in InGaAs/InP heteroepitaxial structures grown by vapor‐phase epitaxy
4. Critical thickness of GaN thin films on sapphire (0001)
5. Optical Properties of Strained AlGaN and GaInN on GaN
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1. Group III Nitrides;Springer Handbook of Electronic and Photonic Materials;2017
2. Growth AlxGa1−xN films on Si substrates by magnetron sputtering and high ammoniated two-step method;Journal of Alloys and Compounds;2016-05
3. Quality and thermal stability of thin InGaN films;Journal of Crystal Growth;2009-05
4. Group III Nitrides;Springer Handbook of Electronic and Photonic Materials;2006
5. Porous SiC for HT Chemical Sensing Devices: an Assessment of its Thermal Stability;Materials Science Forum;2004-06
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