Determination of the infrared absorption cross-section of the stretching vibrations of Ge–O bonds in GeOx films-Reference-Cited by-同舟云学术

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Determination of the infrared absorption cross-section of the stretching vibrations of Ge–O bonds in GeOx films

Published:2022-01 Issue: Volume:4 Page:100461
ISSN:2211-7156
Container-title:Results in Chemistry
language:en
Short-container-title:Results in Chemistry

Author:

Zhang Fan,Volodin V.A.,Astankova K.N.,Kamaev G.N.,Azarov I.A.,Prosvirin I.P.,Vergnat M.

Funder

Ministry of Science and Technology

Ministry of Education and Science of the Russian Federation

Russian Science Foundation

Publisher

Elsevier BV

Subject

General Chemistry

Reference42 articles.

1. M.M. Hussain, Advanced Nanoelectronics: Post-Silicon Materials and Devices. Wiley-VCH Verlag GmbH & Co. KGaA, 2019. https://doi.org/10.1002/9783527811861.

2. Epitaxial GeSn/Ge vertical nanowires for p-Type field-effect transistors with enhanced performance;Liu;ACS Appl. Nano Mater.,2021

3. High-k/Ge MOSFETs for future nanoelectronics;Kamata;Mater. Today,2008

4. Effect of oxidation temperature on physical and electrical properties of ZrO2 thin-film gate oxide on Ge substrate;Lei;Thin Solid Films,2017

5. Structural, chemical, and electrical properties of ZrO2/Ge system formed via oxidation/nitridation in N2O gas ambient;Lei;J. Mater. Sci. Mater. Electron.,2018

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Kinetic study of GeO amorphous film disproportionation into a-Ge nanoclusters / GeO2 system using Raman and infrared spectroscopy;Journal of Non-Crystalline Solids;2024-05

2. Memristors Based on Many-Layer Non-Stoichiometric Germanosilicate Glass Films;Electronics;2023-02-09

3. Nonstoichiometric Germanosilicate Films on Silicon for Microelectronics: Memristors and Other Applications;Optoelectronics, Instrumentation and Data Processing;2022-12

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