Modeling and simulation of 2-D SixGe(1-x) source dual-gate pocket NTFET
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Elsevier BV
Reference33 articles.
1. Multigate transistors as the future of classical metal-oxide-semiconductor field-effect transistors;Ferain;Nature,2011
2. Multiple-gate SOI MOSFETs: device design guidelines;Jong-Tae Park;IEEE Trans. Electron. Dev.,2002
3. Tunnel field-effect transistors: state-of-the-art;Lu;IEEE J. Electron Devices Soc.,2014
4. Low-voltage tunnel transistors for beyond CMOS logic;Seabaugh;Proc. IEEE,2010
5. Tunnel field-effect transistors as energy-efficient electronic switches;Ionescu;Nature,2011
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